Engineers at the University of California at Berkeley and Lawrence Berkeley National Laboratory have discovered a simple new process for repairing common defects on films. The discovery promotes the development of atomic-scale single-layer semiconductors for transparent led screens , high-efficiency solar cells, and micro-transistors. By treating a single-layer semiconductor made of molybdenum disulfide with a strong organic acid, researchers can achieve a 100-fold increase in material efficiency. Lead researcher Ali Javey, a professor at the University of California at Berkeley, said: "This research is the first demonstration of a 'perfect single-layer photovoltaic material' that we have never heard of such a thin material."
The above image shows a laser-excited, defect-free molybdenum disulfide (MoS2) single-layer semiconductor that contributes to the development of transparent led displays , ultra-efficient solar panels, photodetectors, and nanoscale transistors.
The researchers created a layer of molybdenum disulfide with a thickness of only 7/10 nanometers, which is even thinner than human DNA with a diameter of 2.5 nm. Immersing the material in a super acid removes contaminants and fills in missing atoms to repair defects - a chemical reaction called "protonation"
The industry's strong interest in single-layer semiconductors stems from its low absorption of light and the ability to withstand the torsional properties of bending and other stresses. This makes it an ideal choice transparent or flexible equipment, such as high performance deformable led display screen, and the apparatus may become transparent when de-energized.
Above picture left-Cal Logo shape MoS2 single-layer semiconductor; top right - after super acid treatment.
This process can also improve the performance of the transistor by removing defects. As the chip becomes smaller and thinner, defects become an important obstacle to the development of the computer.
Javey said: "The development of defect-free single-layer materials can also clear many of the problems encountered when developing new types of low-power switches." The work of the team has been published in the recently published Journal of Science.
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