Negative oxygen ion generator four

The negative oxygen ion generator introduced in this example uses a transistor and an open electrode plate, and its power consumption is only about 2W, which can be used in home or office.
Circuit Operation Principle The negative oxygen ion generator circuit consists of a full-wave voltage doubler rectifier circuit, a pulse oscillation circuit and a negative high voltage generation circuit, as shown in Figure 9-116.

The voltage doubler rectifier circuit is composed of diodes VD1, VD2 and capacitors Cl, C2.
The pulse oscillating circuit is composed of a primary winding of a transistor V, a resistor R1, a potentiometer RP, a capacitor C3, a diode VD3, and a step-up transformer T.
The negative high voltage generating circuit is composed of a secondary winding of T, a high voltage rectifying silicon stack VD4, a resistor R2, and a capacitor C4.
After the AC 220V voltage is rectified by VD1, VD2 and C1 and C2 full-wave voltage doubler, a DC voltage of about 620V is generated. The DC voltage charges C3 via R1, so that the voltage between the V collector and the emitter rises exponentially as the purpose of C3 charging changes. When this voltage rises to a certain value, V is rapidly turned on (large avalanche breakdown state), C3 is rapidly discharged through the primary windings of V and T, when the voltage on C3 falls below the avalanche breakdown voltage value of V, V cutoff, the DC voltage of 620V is charged to C3 through Rl, and the above process is repeated to form a pulse oscillation.
During the pulse oscillation process, the secondary winding of T induces a pulse pressure of about 3OkV, which is rectified by VD4 and filtered by C4 to become an electrostatic high voltage of -3OkV, which is applied to the discharge board and the air is ionized. A large amount of negative oxygen ions spread around the power line.
VD3 acts as a damping, which conducts during the positive half cycle of the AC pulse.
Adjust the resistance of the RP and change the frequency of the pulse oscillating circuit to control the concentration of negative oxygen ions.
Component selection
Rl selects 2W metal film resistor for use; R2 selects 1/4W metal film resistor or carbon film resistor for use.
RP uses the WSW series of variable resistors.
Both Cl and C2 use aluminum electrolytic capacitors with a withstand voltage of 450V; C3 uses CBB capacitors or immersion paper capacitors with a withstand voltage of 630V; C4 uses polystyrene high voltage capacitors or high voltage ceramic capacitors with a withstand voltage of 3OkV. .
VDl-VD3 selects 1N4007 type silicon rectifier diode for use; VD4 uses two 2DGL type l5kV high voltage rectifier silicon reactors for series connection.
V selects 3DDl5D or DDO3 type silicon NPN transistor.
T uses a step-up transformer for a high voltage electric shock.
The electrode plate can be uniformly welded to a 12Omm x 5Omm epoxy copper plate by using 30 No. 7 sewing needles.